ty switching diode array smbd7000/MMBD7000... ? for high-speed switching applications ? pb-free (rohs compliant) package 1) ? qualified according aec q101 smbd7000/MMBD7000 type package configuration marking smbd7000/MMBD7000 sot23 series s5c maximum ratings at t a = 25c, unless otherwise specified parameter symbol value unit diode reverse voltage v r 100 v peak reverse voltage v rm 100 forward current i f 200 ma non-repetitive peak surge forward current t = 1 s t = 1 s i fsm 4.5 0.5 a total power dissipation t s 28c p tot 330 mw junction temperature t j 150 c storage temperature t stg -65 ... 150 thermal resistance parameter symbol value unit junction - soldering point 2) smbd7000/MMBD7000 r thjs 360 k/w 1 pb-containing package may be available upon special request 2 for calculation of r thja please refer to application note thermal resistance product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics breakdown voltage i (br) = 100 a v (br) 100 - - v reverse current v r = 50 v v r = 100 v v r = 50 v, t a = 150 c i r - - - - - - 0.3 0.5 100 a forward voltage i f = 1 ma i f = 10 ma i f = 50 ma i f = 100 ma i f = 150 ma v f 550 670 - 750 - - - - - - 700 820 1000 1100 1250 mv ac characteristics diode capacitance v r = 0 v, f = 1 mhz c t - - 2 pf reverse recovery time i f = 10 ma, i r = 10 ma, measured at i r = 1ma, r l = 100 ? t rr - - 4 ns test circuit for reverse recovery time ehn00019 f d.u.t. oscillograph pulse generator: t p = 100ns, d = 0.05, t r = 0.6ns, r i = 50 ? oscillograph: r = 50 ? , t r = 0.35ns, c 1pf smbd7000/MMBD7000... product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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